 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6211 2N6212 2N6213 Unit VCEO VCBO VEBO IB IC 225 275 300 350 350 400 6.0 1.0 2.0 3.0 35 -55 to +200 Max. 5.0 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) PT @ TC = +250C (2) Operating & Storage Temperature Top, Tstg TO-66* (TO-213AA) THERMAL CHARACTERISTICS Characteristics Thermal Resistance Junction-to-Case 1) Derate linearly 17.1 mW/0C for TA > +250C 2) Derate linearly 200 mW/0C for TC > +250C Symbol RJC 0 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 V(BR)CEO 225 300 350 250 325 375 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz, RBE = 50 V(BR)CER Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, f = 30-60 Hz, RBE = 50 , VBE = -1.5 Vdc 2N6211 2N6212 2N6213 V(BR)CEX 275 350 400 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6211, 2N6212, 2N6213 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Collector-Emitter Cutoff Current VCE = 150 Vdc Collector-Emitter Cutoff Current VCE = 250 Vdc, VBE = 1.5 Vdc VCE = 315 Vdc, VBE = 1.5 Vdc VCE = 360 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 275 Vdc VCB = 350 Vdc VCB = 400 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Symbol ICEO 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 Min. Max. 5.0 Unit mAdc ICEX 0.5 0.5 0.5 15 15 15 0.5 mAdc ICBO mAdc IEBO mAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0 Adc, VCE = 2.8 Vdc IC = 1.0 Adc, VCE = 3.2 Vdc IC = 1.0 Adc, VCE = 4.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 2N6211 2N6212 2N6213 10 10 10 30 30 30 100 100 100 175 175 150 1.4 1.6 2.0 1.4 Vdc hFE Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.125 Adc VCE(sat) Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.125 Adc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo 4.0 20 220 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 200 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc Turn-Off Time VCC = 200 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc t on 0.6 3.1 s s t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 17.5 Vdc, IC = 2.0 Adc All Types Test 2 VCE = 40 Vdc, IC = 0.875 Adc All Types Test 3 VCE = 225 Vdc, IC = 0.034 Adc 2N6211 Test 4 VCE = 300 Vdc, IC = 0.02 Adc 2N6212 Test 5 VCE = 350 Vdc, IC = 0.015 Adc 2N6213 (3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 |
Price & Availability of JAN2N6211
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |